Comparison of Low Field Electron Transport Properties in InN and GaN Semiconductors Using Iteration Model

Electron mobility in GaN and InN are calculated, by solving Boltzmann equation using iteration model, as a function of temperature for carrier concentrations of 10 16 , 10 17 , and 10 18 cm -3 . Both GaN and InN have maximum mobility between 100 and 200 K, depending on the electron density. The theoretical maximum mobility in GaN and InN at 300 K are about 1000 and 4400 cm 2 V -1 s 1. We compared the results with experimental data and find reasonable correlation. Keywords-: Iteration Model; ionized impurity scattering; Electron mobilities.